Igor Iatsunskyi, Ph.D, D.Sc.
Degree:
Ph.D., Physics, Odessa I.I.Mechnikov National University, Ukraine, 2009
+48 61 829 6711
igoyat@amu.edu.pl
Research interests:
Physics of semiconductor materials/devices and silicon nanostructures involving:
- formation of silicon nanostructures
- physical characterization of nanostructures (morphology, electrical and optical properties)
- adsorption phenomena in porous silicon structures, biosensors
- surface and interfacial phenomena
- metal-oxide-semiconductor structures (degradation, characterization etc.)
- solar cell and sensors based on nanosilicon
Selected publications:
- I. Iatsunskyi, M. Pavlenko, R. Viter, M. Jancelewicz, G. Nowaczyk, I. Baleviciute, K. Załęski, S. Jurga, A. Ramanavicius, V. Smyntyna, Tailoring the Structural, Optical, and Photoluminescence Properties of Porous Silicon/TiO2 Nanostructures, J. Phys. Chem. C, 2015, 119, 7164–7171
- I. Iatsunskyi, M. Kempinski, G. Nowaczyk, M. Jancelewicz, M. Pavlenko, K. Załeski, Stefan Jurga, Structural and XPS studies of PSi/TiO2 nanocomposites prepared by ALD and Ag-assisted chemical etching, Applied Surface Science 2015, 347, 777–783.
- R. Viter, A.A. Chaaya, I. Iatsunskyi, G. Nowaczyk, K. Kovalevskis, D. Erts, P. Miele, V. Smyntyna, M. Bechelany, Tuning of ZnO 1D nanostructures by atomic layer deposition and electrospinning for optical gas sensor applications, Nanotechnology 2015, 26, 105501
