Cleanroom laboratory

The Cleanroom laboratory is designed and maintained to standards in accordance with: ISO 14644-1: 1999, ISO 14644-1: 2015 and EU GMP (Guide to Good Manufacturing Practise).

In addition to the laboratory equipment listed below, the main rooms of the CNBM cleanroom laboratory are the cloakroom (room 0/6d), the "clean" corridor (room 0/6f), the "dirty" corridors (rooms 0/6g and 0/6h, which serve as technical facilities with the supply of the necessary utilities) and the airlocks: two pressurised and one rotary (necessary for the proper circulation of air between the clean zones, the regulation of working pressures and the guarantee of an adequate sanitary and sterile regime).

Cleanroom A (pom. 0/6a)

Designed for ISO3 class (1000 N/m3 particle size 0.1um)

High Vacuum Material Vaporising Machine

  • Two growth chambers for the deposition of magnetic/non-magnetic metallic layers with load-lock system
  • Vacuum system with cryogenic pumps (< 5x10-9 mbar)
  • Electron gun (Telemark, 6 crucibles x 7 cm3)
  • Ion cannon (Tectra) for cleaning substrates prior to vapour deposition
  • UHV Manipulator
    • insert diameter: 0.2‘ - 4’ (various shapes)
    • Floor-source angle para: +/- 50°
    • adjustable ground speed
    • resolution of media rotation: 1°
  • Thickness gauge and deposition rate measuring system

Innova Bruker Atomic Force Microscope

XY scanning range up to 90 µm2, Z=7.5 µm and 5 µm2 Z=1.5 µm, unique closed-loop optoelectronic system to stabilise scanner operation while maintaining low noise and atomic resolution.  Available operating modes: Contact Mode (in air), Tapping Mode (in air), Phase Imaging, Lift Mode, Magnetic Force Microscopy (MFM), Electrostatic Force Microscopy (EFM), Dark Lift, Lateral Force, Microscopy, Nano-Indentation, Scanning Tunneling Microscopy STM, Low Current STM, Conductive AFM, STM with EC, Contact and Tapping Mode with EC, Surface Potential, Piezoresponse, Scanning Capacitance, Force Modulation.

Cleanroom B (pom. 0/6b)

Designed for ISO3 class (1000 N/m3 particle size 0.1um)

Atomic Thick Film Reactor

  • Top-flow reaction chamber (uniform, vertical gas flow perpendicular to the substrate), integrated in the vacuum chamber, heated
  • Sources of precursors
    • for gaseous precursors
    • for liquid precursors
    • for liquid/gas precursors heated to 300°C
  • Maximum process temperature: 500°C
  • Wafer size: up to 200 mm x 10 mm
  • 3D substrates: up to 150 mm x 120 mm
  • Carrier gases: nitrogen, argon
  • Load-lock loading system

Ion etching machine

  • RIE chip for ion treatment of silicon substrates up to 200 mm in diameter
  • Loading chamber with sample transfer system
  • Alternating current (RF) plasma source with upper and lower electrodes in parallel configuration. Plasma generator: 13.56 MHz frequency, 600 W
  • Gas lines: Ar, O2, SF6, CHF3
  • Pump system: Pre-vacuum pump, turbomolecular pump
  • System for a top-down process using working gases containing oxygen, fluorine or chlorine
  • Control system with etching procedures for silicon-containing materials (Si, SiO2, Si3O4)
  • Homogeneity of the etching process: < +/- 3% on a 100 mm substrate
  • Process repeatability: < +/- 3% on 200 mm substrate
  • Etching speed SiO2 > 0.1 µm/min

Cleanroom C (pom. 0/6c)

Designed for ISO2 class (100 N/m3 particle size 0.1um)

Mask centering device with rotary trays

  • Exposure modes: maskless, top-centred, proximity (with gap control: 1-300 µm), soft-contact (with pressure control: 0.1-40 N), hard-contact (with pressure control), vacuum contact (with vacuum control)
  • Centring table with precision regulator
  • Digital microscope (top view)
    • two-pole, manual
    • High-resolution CCD camera
    • 2 lenses (10x)
    • digital zoom (4x)
  • Optical system, light source (NUV)
  • Substrate holders (Ø 100, 150 mm) and mask holders (Ø 125, 175 mm)

Cleanroom D 10000 (pom. 0/6e)

Designed for ISO4 class (10000 N/m3 particle size 0.1um)

Ultra and Thermal Compression Wire Bonding Machine Type 53xxBDA

  • The 53xx BDA machine can be used as an ultrasonic ball and wedge jointer for thin gold wires, when software version 5310 is selected, or as a deep penetration wedge jointer for aluminium and gold wires, when software version 5332 is selected,
  • Special design of the splicing head. Changing from one splicing option to another is a simple process involving only a quick and easy change of wire and splicing tool,
  • Ready for operation once the relevant software is running,
  • Can be spliced with tape wires from 30 to 250 μm wide,
  • Operating temperature: 18-24,5°C,
  • Relative humidity: 45% +/- 10%, non-condensing,
  • Supply voltage: 115 - 230 V AC,
  • Voltage frequency: 50 - 60 Hz,
  • Installed load: 230W,
  • Noise emission: <70dBA,
  • Vacuum: <300 mbar (6 mm external diameter).

OHAUS AX Adventurer AX223 Lab Scale

  • Elemental division d: 0.001g.,
  • Max. measuring range: 220g.,
  • Pan size: 130mm.,
  • Internal calibration: yes,
  • Stabilisation time: 2s.,
  • 4.3’ diagonal graphic touchscreen display,
  • Anti-blast glass cabinet, cascading side door, top guides,
  • Anti-vibration weighing table dimensions: 900x600x750mm with vibration isolators and granite stone measuring: 400x400x50-60mm.