The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering

Publish Year: 2017
Publisher:  Scientific Reports 7, 2017, 16449
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M. Wiesner, A. Trzaskowska, B. Mróz, S. Charpentier, S. Wang, Y. Song, F. Lombardi, P. Lucignano, G. Benedek, D. Campi, M. Bernasconi, F. Guinea, A. Tagliacozzo
It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.

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