The electron-phonon interaction at deep Bi 2 Te3-semiconductor interfaces from Brillouin light scattering

Rok publikacji: 2017
Wydawca:  Scientific Reports 7, 2017, 16449
Zobacz publikację
M. Wiesner, A. Trzaskowska, B. Mróz, S. Charpentier, S. Wang, Y. Song, F. Lombardi, P. Lucignano, G. Benedek, D. Campi, M. Bernasconi, F. Guinea, A. Tagliacozzo
It is shown that the electron-phonon interaction at a conducting interface between a topological insulator thin film and a semiconductor substrate can be directly probed by means of high-resolution Brillouin light scattering (BLS). The observation of Kohn anomalies in the surface phonon dispersion curves of a 50 nm thick Bi2Te3 film on GaAs, besides demonstrating important electron-phonon coupling effects in the GHz frequency domain, shows that information on deep interface electrons can be obtained by tuning the penetration depth of optically-generated surface phonons so as to selectively probe the interface region, as in a sort of quantum sonar.

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