Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Publish Year: 2016
Publisher:  Materials Science-Poland, 2016, 34, 3, 676–683
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R. Skonieczny, P. Popielarski, W. Bała, K. Fabisiak, K. Paprocki, M. Jancelewicz, M. Kowalska, M. Szybowicz
The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate

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