You are here

CleanRoom


Ultra High Vacuum machine (UHV) for evaporation of materials

  • Two growth chambers for the deposition of metallic layers (magnetic/nonmagnetic) with load-lock system
  • UHV system equipped with cryogenic pumps (< 5x10-9 mbar)
  • Electron gun (Telemark, 6 crucibles x 7 cm3)
  • Ion gun (Tectra) to clean the substrate before evaporation process
  • UHV manipulator:
- diameter of wafers: 0,2” – 4” (different shapes)
- substrate-vapor source angle: +/- 50°
- adjustable speed rotation of the substrate
- source rotation resolution: 1°
  • Thickness gauge and evaporation rate measurement system
 

Mask aligner with spin coater

  • Exposure modes: without a mask, the top centered, proximity (adjustable slots: 1-300 mm), "soft-contact" (adjustable pressure: 0.1-40N), "hard contact" (pressure regulation), "vacuum contact "(adjustable vacuum level)
  • Precisely control table
  • Digital microscope:
- manual
- high-resolution CCD camera
- 2 lenses (10x)
- digital zoom (4x)
  • Optical system (NUV)
  • Substrate handles (Ø 100, 150 mm) and masks handles (Ø 125, 175 mm)
 

Atomic Layer Deposition System (ALD)

  • The reaction chamber "top-flow" (uniform, vertical gas flow orthogonal to the substrates), integrated in a vacuum chamber, heated
  •  Precursors sources:
- for solid state precursors
- for liquid precursors
- for solid/liquid precursors (up to 300°C)
  • Max. temperature of the proces: 500°C
  • Size of wafers: up to 200 mm x 10 mm
  • 3D substrates: up to 150 mm x 120 mm
  • Gases: nitrogen, argon
  • Load-lock system
 

Reactive Ion Etching (RIE)

  •       RIE-system for the processing of up to 200 mm diameter wafers equipped with RF paralel plate plasma source
  •       Plasma source: 13.56 MHz, 600 W
  •       Load-lock system
  •       Gas lines: Ar, O2, SF6, CHF3
  •       Vacuum system: turbo molecular pump with banking pump
  •       System design is configured for downstream processes under the use of oxygen, fluorine or chlorine containing gases
  •       Standard recipes for etching processes of silicon containing materials (Si, SiO2, Si3N4)
  •       Homogeneity deviation: < +/- 3% over 100 mm substrates
  •       Repeatability of the process: < +/- 3% over 200 mm substrates
  •       SiO2 etching rate> 0.1 mm/min
 

Contact | Contact database | RSS | Login
© 2017 CENTRUM NANOBIOMEDYCZNE UAM | ul. Umultowska 85, PL61614 Poznań, Poland | tel.+48 61 829 67 04.

Developed by drupalninja.pl